Program
Program
Plenary Speakers
Invited Speakers
Tutorial Sessions
ISPB 2018
Floor Plan
Date
Select
July 25 (Wed.)
July 26 (Thu.)
July 27 (Fri.)
July 28 (Sat.)
Place
ALL PLACE
Room A (#104~106)
Room B (#113)
Room C (#114)
Room D (#115)
Room E (#107~108)
Room F (#117~118)
Room Room C (#114)
FC2. Plasma & Atomic Layer Etching
July 27 (Fri.)
13:40-15:00 ~
[FC2-1]
13:40-14:10 ~
Room C (#114)
[Invited] Atomic Layer Defect-Free Top-Down Processes for Future Nano-Devices
Seiji Samukawa (Tohoku Univ., Japan)
[FC2-2]
14:10-14:30 ~
Room C (#114)
Surface Reaction Mechanisms of Hexafluoroacetylacetone (HFAC) on a Nickel or Nickel Oxide Surface for Atomic-Layer Etching (ALE)
Abdulrahman Hikmat Basher
1
, Michiro Isobe
1
, Tomoko Ito
1
, Kazuhiro Karahashi
1
, Masato Kiuchi
2
, Takae Takeuchi
3
, and Satoshi Hamaguchi1 (
1
Osaka Univ., Japan,
2
AIST, Japan,
3
Nara Women`s Univ., Japan)
[FC2-3]
14:30-15:00 ~
Room C (#114)
[Invited] Isotropic Atomic Layer Etching of ZnO on 2D and 3D Substrates Using Acetylacetone and O2 Plasma
Alfredo Mameli
1
, Marcel A. Verheijen
1
, Adrie J.M. Mackus
1
, Erwin (W.M.M.) Kessels
1
, and Fred Roozeboom1,2 (
1
Eindhoven Univ. of Tech., The Netherlands,
2
TNO, The Netherlands)
Type
Authors
Session Title
Paper Title
