Program
Program
Plenary Speakers
Invited Speakers
Tutorial Sessions
ISPB 2018
Floor Plan
Date
Select
July 25 (Wed.)
July 26 (Thu.)
July 27 (Fri.)
July 28 (Sat.)
Place
ALL PLACE
Room A (#104~106)
Room B (#113)
Room C (#114)
Room D (#115)
Room E (#107~108)
Room F (#117~118)
Room Room E (#107~108)
WE2. Nano Devices Using 2D Materials
July 25 (Wed.)
13:20-15:00 ~
[WE2-1]
13:20-13:50 ~
Room E (#107~108)
[Invited] 2D Materials Based ISFETs for pH Sensing Applications
Chunxiang Zhu (Nat`l Univ. of Singapore, Singapore)
[WE2-2]
13:50-14:20 ~
Room E (#107~108)
[Invited] Energy Dissipation and Light Emission in Graphene
Myung-Ho Bae (KRISS, Korea)
[WE2-3]
14:20-14:40 ~
Room E (#107~108)
Top-Gated MoS2 Field-Effect Transistor with Ultra-Thin HfO2 Gate Dielectric Formed by Hf-Seeded Atomic Layer Deposition
Hoijoon Kim
1
, Taejin Park
1
, Seongjae Park
1
, Mirine Leem
1
, Wonsik Ahn
1
, Seong-Jun Jeong
2
, Seongjun Park
2
, Yunseok Kim
1
, and Hyongsub Kim1 (
1
Sungkyunkwan Univ., Korea,
2
Samsung Advanced Inst. of Tech., Korea)
[WE2-4]
14:40-15:00 ~
Room E (#107~108)
Characterization of Defects in 2D Materials with Tip Enhanced Raman Scattering
Byeong Geun Jeong
1
, Chanwoo Lee
1
, Seung Mi Lee
2
, and Mun Seok Jeong1 (
1
Sungkyunkwan Univ., Korea,
2
KRISS, Korea)
Type
Authors
Session Title
Paper Title