Date
Place
- Room E (#107~108)
- WE2. Nano Devices Using 2D Materials
- July 25 (Wed.)
- 13:20-15:00 ~
- [WE2-3]
- 14:20-14:40 ~
- Title:Top-Gated MoS2 Field-Effect Transistor with Ultra-Thin HfO2 Gate Dielectric Formed by Hf-Seeded Atomic Layer Deposition
- Hoijoon Kim1, Taejin Park1, Seongjae Park1, Mirine Leem1, Wonsik Ahn1, Seong-Jun Jeong2, Seongjun Park2, Yunseok Kim1, and Hyongsub Kim1 (1Sungkyunkwan Univ., Korea, 2Samsung Advanced Inst. of Tech., Korea)
Abstract Download
