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Program

Date
Place
  • Room F (#117~118)
  • WP. Poster Session
  • July 25 (Wed.)
  • 17:30-19:00 ~
  • [WP-086]
  • 17:30-19:00 ~
  • Title:A Study of High Voltage Oxide Breakdown Voltage Drop Induced by Etch Damage in NAND Flash Memory
  • Sungjin Jang1 and Byoung-Deog Choi2 (1Samsung Electronics Co., Ltd., Korea, 2Sungkyunkwan Univ., Korea)

  • Abstract Download